| 摘要 |
PURPOSE:To obtain the titled device having metallic wiring of high reliability by a method wherein a wiring is formed after the stepwise difference due to a contact hole is substantially eliminated by filling the contact hole with metal. CONSTITUTION:The contact hole 7 is formed in an insulation film 2 on a semiconductor substrate 1 by using resist films 3 and 5 as a mask, and a metallic layer 10 is formed by sputtering a metal to a thickness of the degree that the contact hole 7 is filled. At least the part of the layer 10 avove the resist film 5 is removed by etching with a resist film 12 as a mask. After removal of the first - third resist film 3, 5, and 12, the part of the layer 10 projecting out of the hole 7 is removed by etching. This manner enables the hole 7 to be filled with the layer 10, resulting in the formation of a metallic wiring passing over the insulation film 2 and connected to the layer 10 having no possibility of disconnection. |
