| 摘要 |
PURPOSE:To reduce deterioration in electrical characteristics and periodicity of a periodic structure of thin film, by setting a mask with a hole in a growing chamber, hitting molecular beams from plural cells through the hole of the mask to a substrate while rotating a substrate holder. CONSTITUTION:The central mask 13 having a hole is set in a growing chamber packed with a molecule such as As, etc. of group V. MOlecules emitted from the plural molecular cells 11 and 12 of group III reach the positions 14 and 15 through the hole. When the substrate holder 16 is rotated around the shaft 17, a thin film of a semiconductor of groups III-V consisting of molecule of group IIIfrom the cell 11 is grown on the substrate 18 at the position 14, a thin film of a semiconductor of groups III-V consisting of the molecule of group III from the cell 10 is grown at the position 15, and they are laminated and grown alternately. By this method, occurrence of impure gas from a cell shutter and disturbance of intensity of molecular beam are dissolved. Consequently, a fine periodic structure of thin film of single crystal having good periodicity is simply formed by MBE growth. |
