| 摘要 |
PURPOSE:To much more reduce the number of dust deposits on the title substrate, by a method wherein a semiconductor substrate is inclined at a fixed angle to the etchant surface and pulled up to the direction this inclination. CONSTITUTION:A holding member 12 is supported in the inclination of a fixed angle theta to the surface 4 of the etchant 3, so as to be pulled up to the direction of this inclination. Therefore, a semiconductor substrate 1 etched by dipping in the etchant 3 is pulled up from inside it to the direction P by keeping the inclination of an angle theta to the surface 4 of the etchant 3. When the semiconductor substrate is given the inclination of an angle theta and pulled up to this direction of inclination, the number of dust deposits more reduces as the angle of inclination of the substrate is made acuter. |
