| 摘要 |
PURPOSE:To obtain a silicon epitaxial growth film having sufficiently preferable crystallinity due to silicon molecule beam grown by forming a thin silicon film on a thin silicon oxide film, and then heating in high vacuum at the specific temperature or higher for a short time. CONSTITUTION:A normal single crystal silicon substrate presents a silicon oxide film 20 on the surface of the substrate 10, and contamination impurity 30 such as carbon exists in the boundary between the surface of the film 20 and the substrate 10. When it is cleaned with solution containing boiling aqueous hydrogen peroxide, and heated in a vacuum vessel, a carbon 31 is separated from the surface of a high quality silicon oxide film 21. Then, a thin silicon film 40 is formed on a high quality silicon oxide film 21 in the same vacuum vessel. Subsequently, when it is heated at 730 deg.C or higher for a short time in the same vacuum vessel, the film 21 on the substrate 10 and the film 40 react to separate. As a result, the substrate 10 having extremely clean surface can be obtained. Then, a silicon epitaxial film 50 is grown by a molecular beam. |
