| 摘要 |
PURPOSE:To obtain the FET of stable electric characteristics in the interface between a gate electrode and the surface of a compound semiconductor by a method wherein a high melting point metal series film is adhered on an operating layer of the surface of a substrate by the sputtering method under a specific argon pressure, and then made as the gate electrode. CONSTITUTION:An operating layer region 12 is formed by Si ion implantation to the semi-insulation GaAs substrate 11. Using a Ti-containing W target, a TiW film is adhered by setting the Ar gas pressure to 5mm.Torr or less; then, the Ar gas pressure is increased to 15-30mm.Torr, thus forming a TiW film in succession. The gate electrode 13 is formed by etching the TiW film by using a mask. An Si oxide film 14 is adhered by Si ion implantation and annealed, resulting in the formation of the source-drain layers 15. An Si oxide film 17 is formed as an interlayer insulation film by evaporating AuGe 16, and a source-drain electrode wiring 18 is formed by evaporating a TiPtAu film. |
