| 摘要 |
PURPOSE:To obtain the titled device of recess structure excellent in connection, high frequency characteristic, and reproducible production by a method wherein an active layer is electrically connected to an ohmic contact region by means of an ion implanted layer made of an element having a large coefficient of diffusion. CONSTITUTION:An N type GaAs layer 2 is formed on a GaAs high resistant substrate 1, an SiO2 film 11 is formed on the surface serving as a recess region; then, Si is ion-implanted for forming the ohmic contact region, and S for forming the connection layer. A recess structure is formed by etch-removing the film 11 and the layer 2 with an Si3N4 12 as a mask. After Si ion implantation for forming the active region, ohmic contact regions 3, 4, the active laye 5, and the S-ion implanted layer 9 electrically connecting the regions 3, 4 to the active layer 5 and having a large coefficient of diffusion are formed by annealing. A gate electrode 6, a base electrode 7, and a drain electrode 8 are formed; accordingly, a GaAs FET is completed. |
