发明名称 HEAT TREATING METHOD
摘要 PURPOSE:To uniformly heat even if a pattern is formed in any shape and density on a transparent substrate by bonding a film for absorbing a light on the back surface of the substrate heat treated by light heating. CONSTITUTION:When patterns 2, 3 of opaque films formed on a transparent substrate 1 are heated by a light heating method, a film 4 for absorbing a light is formed on the entire surface at the side having no patterns 2, 3 of the substrate 1 and heated with light. The film 4 is formed, for example, ith a polycrystalline silicon film. A lamp annealing may be performed from the side of the film 4 or from the opposite side. Thus, since the light not absorbed to the film 3 of small size is absorbed to the film 4, the films 2, 3 become the same temperature irrespective of the magnitude of the size.
申请公布号 JPS60145629(A) 申请公布日期 1985.08.01
申请号 JP19840002175 申请日期 1984.01.10
申请人 NIPPON DENKI KK 发明人 OONO YASUO;MORIYAMA ICHIROU
分类号 H01L21/26;H01L21/324 主分类号 H01L21/26
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