| 摘要 |
<p>PURPOSE:To improve the accuracy of mask alignment, reproducibility, working efficiency, and yield by graduating a mask alignment pattern for photo engraving at the part of an epitaxial resistor on a semiconductor substrate in the trimming process. CONSTITUTION:The graduated 12' mask alignment pattern 12 superposed on the mask alignment pattern 11 on the semiconductor substrate is so designed that an epitaxial resistor pattern shifts by 1/4 when the graduated pattern is slidden by a step. Mask alignment by sliding the pattern 12 to left by a step leads the element pattern 13 of the epitaxial resistor to photo engraving by shifting by 1/4 correctly. Then, superpositional photo engraving is carried out to the mask alignment pattern 12 on the semiconductor substrate by shifting by the graduation amount based on the data of measurement result.</p> |
