| 摘要 |
PURPOSE:To adjust always a composition ratio of Al in a growing film to the desired value, by measuring concentration of steam contained in a raw material gas of a hydride of an element of the group V in gaseous-phase growth, changing a feed amount of a raw material of alkyl compound. CONSTITUTION:A compound semiconductor such as Ga1-xAlxAs, etc. containing Al by using an alkyl compound of an element of group III and a hydride of an element of group V is grown by organometallic gaseous-phase growth method. In the operation, concentration of steam in arsine of a raw material gas of a hydride of an element of the group V is measured. A feed amount of a raw material of alkyl compound of Al is changed depending upon the measured value, and a composition ratio of Al in the growth layer is corrected to the desired value. |
