| 摘要 |
PURPOSE:To obtain high electron mobility by forming ohmic electrodes for a source and a drain in two isolated regions in an N<+> type AlxGa1-xAsySb1-y layer respectively. CONSTITUTION:An undoped In0.53Ga0.47As layer 12, an In0.65Ga0.35As layer 13, an In0.77Ga0.23As layer 14, an In0.88Ga0.12As layer 15, an AlAs0.16Sb0.84 layer 16, an undoped InAs layer 17, an undoped Al0.5Ga0.5As0.12Sb0.88 layer 18 represented by AlxGa1-xAsySb1-y (y=0.067x+0.090), and an N<+> type Al0.5Ga0.5As0.12 Sb0.88 layer 19 by Si doping are grown on a semi-insulating InP substrate 11 in succession through a method such as a molecular-beam epitaxial method. A Schottky gate electrode 20 consisting of A is formed on the layer 19 and ohmic electrodes 21, 22 composed of AuGeNi are shaped on both sides of the electrode 20. Accordingly, ionized impurity scattering is reduced, and high electron mobility is obtained. |
