发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a sufficient bonding strength, by heating locally a part to be bonded of a lead without a metal plated layer for a short period directly before bonding it. CONSTITUTION:A lead 8 is heated at its local area to be bonded, by a heating device 9 for a short duration of time just before a metallic small-gage wire 11 is bonded to the lead 8, so that the bonding can be completed before the surface of the lead which is not plated with metal is oxidized excessively. Thus, the bonding can be provided with a strength equivalent to that of a metal-plated lead. The bonding strength may be further improved particularly by employing the ultrasonic bonding method while introducing a mixture gas of H2 and N2 as the atmosphere through pipes 3.
申请公布号 JPS60144943(A) 申请公布日期 1985.07.31
申请号 JP19840001225 申请日期 1984.01.07
申请人 KANSAI NIPPON DENKI KK 发明人 NISHIKAWA HARUO
分类号 H01L21/60 主分类号 H01L21/60
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