| 摘要 |
PURPOSE:To increase regions effectively functioning as transistors by arranging emitter and collector regions in the lateral direction and forming recessed sections to each region. CONSTITUTION:A second conduction type semiconductor region 7 in high concentration is formed to a first conduction type semiconductor substrate 6, a second conduction type semiconductor region 5 is grown, and a nitride film 8 is grown. The films 8 corresponding to sections where a collector 2-1 and an emitter 2-2 in a lateral type transistor are shaped are etched. Semiconductor sections not coated with the films 8 are changed into oxide films through selective oxidation, and the oxide films are removed through etching. Consequently, sections as the collector and the emitter in the lateral transistor have recessed sections. A first conduction type impurity is diffused to form the emitter and collectors 2-2 and 2-1. A base contact region 3 is shaped. Accordingly, the opposed areas of the emitter and the collector can be increased by several times. |
