| 摘要 |
PURPOSE:To reduce resistance at a node between wirings by laminating a conductor layer connected to one wiring while crossing the stepped section of the end of the other wiring on the node between the wirings of two kinds formed on a substrate without an insulating film. CONSTITUTION:A wiring 1 consisting of WSi and an oxide film 6 are formed on a semi-insulating GaAs substrate 10, and an Au wiring 2 is shaped. The oxide film 6 and the wiring 2 are coated with an oxide film 11, the oxide film 11 is bored just above a boundary 2'' between the wirings 1, 2, and an Au layer 3 is evaporated. A resist mask 13 is applied, and Au 3 is etched, thus completing the titled integrated circuit. According to the constitution, wiring material layers of two kinds can be connected by low resistance without increasing a special manufacturing process, and the method is useful for improving the degree of integration. |
