| 摘要 |
PURPOSE:To obtain low resistance easily by forming a resistance region in a polycrystalline Si layer burying a groove element isolation region. CONSTITUTION:A groove element isolation region consists of an Si oxide film 3 constituting an inner wall surface and a polycrystalline Si oxide layer 4 burying the inside of a groove. A polycrystalline Si layer resistor forming region 5 is formed to a projecting shape so as to mutually superpose to a base region in a transistor. The value of a resistor R formed takes an extremely low value of 100OMEGA/mm.<2> because thickness in the vertical direction of the polycrystalline Si layer is sufficient at that time. However, a resistance region is isolated from other element regions only by the Si oxide film 3 in approximately 0.1mum thickness on the inner wall of the groove, but no problem is generated under the normal state of usage. |
