| 摘要 |
PURPOSE:To obtain a semiconductor device having SOI structure having excellent crystallizability through selective epitaxial growth and surface grinding. CONSTITUTION:Windows 203 are bored to an SiO2 film 202 on an Si substrate 201 having 10OMEGAcm resistivity through reactive ion etching, and an N type single crystal layer 204 in thickness of half or more of the intervals (x) of the windows is formed through decompression epitaxial growth containing HCl to coat the SiO2 film 202. The surface is flattened through mechanical grinding, an SiO2 film 205 and Si3N4 film 206 are superposed, windows 207 are bored to the film 206 on the windows 203 in size slightly larger than the windows 203, the single crystal 204 is changed partially into SiO2 208 through thermal oxidation and connected to SiO2 202, and single crystal regions 210 surrounded by an insulating film are obtained. The single crystal region by the constitution is more excellent than conventional laser annealing in crystallizability, and has the surface in which there are hardly defects. When a predetermined semiconductor device is formed in the region 210, a semiconductor device having superior SOI structure is obtained. |
