| 摘要 |
PURPOSE:To reduce a distance between an auxiliary base region and an emitter region by differently composing an insulating film on the peripheral region of a polycrystalline Si film on the emitter region and an insulating film on an isolation region between the emitter region and the auxiliary base region. CONSTITUTION:An N<+> buried collector 2 is formed on a P type semiconductor substrate 1, an N<-> epitaxial layer 3 is shaped to the substrate 1, and an Si oxide film 6 is formed. A P type base region 4 is formed in the region 3, the insulating film on the region 4 and an N<+> type collector electrode section 5 is removed, and an Si surface is exposed. A polycrystalline Si film 9, an Si oxide film 10 and an Si nitride film 11 are grown. An Si nitride film 12 is grown, and an Si oxide film 13 is grown. The film 12 and the film 13 are shaped around the film 11 while the thickness sections of both films 12 and 13 are left, and a low-resistance auxiliary base region 14 is shaped. The film 9 is oxidized in a self-alignment manner. The residual film 11 is etched, the film 10 is removed, and an emitter region 15 is formed. Accordingly, a distance between the region 14 and the region 15 is determined in the self-alignment manner by the thickness of the film 13. |
