| 摘要 |
PURPOSE:To obtain a Ge etching soln. giving a mirror etched surface with high controllability by mixing phosphoric acid with hydrogen peroxide and alcohol in a specified ratio. CONSTITUTION:A Ge etching soln. used in a stage for manufacturing a semiconductor element from Ge is obtd. by adding 30cc alcohol such as methanol as a relaxing agent to 100cc mixed soln. consisting of phosphoric acid and an aqueous hydrogen peroxide soln. When 50cc phosphoric acid is mixed with 50cc aqueous hydrogen peroxide soln., the highest rate of etching is attained. The depth of etching is increased in proportion to the extension of etching time. When Ge is etched with the etching soln., the extent of etching can be easily controlled by adjusting the mixing ratio, and a mirror etched surface is obtd. |
