发明名称 SEMICONDUCTOR LIQUID PHASE EPITAXIAL GROWTH EQUIPMENT
摘要 PURPOSE:To utilize the inner diameter of a heater effectively eliminating any useless space by means of adhering a carbon made cylindrical heater closely to a reaction tube. CONSTITUTION:A pyrolytic boron nitride reaction tube 11 is formed into cylindrical shape. The reaction tube 11 is formed into one body with a carbon heater 12 adhering closely thereto. During growing process, electrodes 14, 15 are supplied with current to heat the heater 12 for heating a growing boat 13 in the reaction tube 11 up to specified temperature. Through these procedures, the inner diameter of heater 12 may be utilized effectively eliminating any useless space.
申请公布号 JPS61180428(A) 申请公布日期 1986.08.13
申请号 JP19850021051 申请日期 1985.02.06
申请人 SUMITOMO ELECTRIC IND LTD 发明人 YAMABAYASHI NAOYUKI
分类号 H01L21/208;(IPC1-7):H01L21/208 主分类号 H01L21/208
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