| 摘要 |
<p>METHOD FOR REGULATING CONCENTRATION AND DISTRIBUTION OF OXYGEN IN CZOCHRALSKI GROWN SILICON Oxygen concentration and distribution within silicon crystal rods drawn according to the Czochralski process from silicon melt contained in a silica crucible, are regulated through variation of both the magnitude and relative sense of direction of seed and crucible rotation rates with uniform distribution of the oxygen being accomplished by increasing crucible rotation rate to preselected values as a function of crystal rod growth and melt consumption.</p> |
