Semiconductor memory device

摘要

In a semiconductor memory device including an output buffer circuit receiving data signals read out from a memory cell array, an output stage MOS transistor being turned ON and OFF according to the output signals of the output buffer circuit, and an output buffer enable (OBE) signal generator circuit for generating an OBE signal which is used as the voltage supply to the output stage of the output buffer circuit, a VBS voltage generator circuit is provided for generating a voltage VBS higher than the voltage source VCC preceding the rising up of the OBE signal, which voltage VBS is used as a voltage supply to the output stage of the OBE signal generator circuit, whereby the OBE signal is formed as a voltage waveform which rises rapidly up to a level higher than the voltage source VCC.