发明名称 |
Photodetector with enhanced light absorption |
摘要 |
A photodetector including a light transmissive electrically conducting layer having a textured surface with a semiconductor body thereon. This layer traps incident light thereby enhancing the absorption of light by the semiconductor body. A photodetector comprising a textured light transmissive electrically conducting layer of SnO2 and a body of hydrogenated amorphous silicon has a conversion efficiency about fifty percent greater than that of comparative cells. The invention also includes a method of fabricating the photodetector of the invention.
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申请公布号 |
US4532537(A) |
申请公布日期 |
1985.07.30 |
申请号 |
US19820424137 |
申请日期 |
1982.09.27 |
申请人 |
RCA CORPORATION |
发明人 |
KANE, JAMES |
分类号 |
H01L31/00;H01L31/0216;H01L31/0236;H01L31/04;H01L31/10;H01L31/105;H01L31/18;(IPC1-7):H01L31/02 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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