发明名称 |
FORMATION OF GAP FOR THIN FILM TRANSDUCER |
摘要 |
Process for lift-off fabrication of sputtered dielectric or nonmagnetic gap materials and thin-film heads for either a single-element thin-film head or side-by-side elements on a thin-film head. The lift-off process utilizes a copper coating that is removed by a twenty percent solution of ammonium persulfate with a pH in the range of seven to nine to assure complete removal of gap material from the back closure of the thin-film head without damage to the underlying permalloy. The process can also be utilized to obtain a multiple layer deposits on a single thin-film had by repeating the steps of the process. The process provides for a clean hole, no dielectric on the surface nor any attacking on the magnetic material. |
申请公布号 |
JPS60143416(A) |
申请公布日期 |
1985.07.29 |
申请号 |
JP19840242573 |
申请日期 |
1984.11.19 |
申请人 |
INTERN BUSINESS MACHINES CORP |
发明人 |
NASANIERU KAARU ANDAASON;ROBAATO BUREIA CHIESUNATSUTO;RARII YUUJIN DEBII |
分类号 |
C23F1/14;G11B5/23;G11B5/31;G11B5/48;H01F41/34 |
主分类号 |
C23F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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