| 摘要 |
PURPOSE:To obtain a photoconductive member excellent and stable in electrical, optical, and photoconductive characteristics, improved in photosensitivity in a longer wavelength region, and superior in both mechanical strength and durability, by forming a photoreceptor specified in layer structure made of a-SiGe(H, X) on a substrate. CONSTITUTION:A photoconductive photoreceptor layer 102 is formed on a substrate 101, and it is composed of the first layer 103 made of amorphous Si, the second layer 104 made of amorphous Si and Ge, and the third layer 105 made of amorphous Si contg. O, from the substrate side. The layer 104 contains Ge in a concn. distribution nonuniform in this layer thickness direction, and at least one of the layers 103 and 104 contains H and/or halogen, and further, preferably, a conductivity governor, such as group III or V. The formation of the photoreceptor layer 102 having such a layer structure can improve electrical, optical, photoconductive, voltage withstanding, and use environment withstanding characteristics. |
