| 摘要 |
PURPOSE:To unify film thickness of thin films to be grown on semiconductor substrates by unifying distribution of plasma by a method wherein low-frequency electric power is applied to a coil on the side near the exhaust tube of a reaction tube, and high-frequency electric power is applied to a coil on the side near a gas feed tube. CONSTITUTION:A coil 7 to be applied with low-frequency electric power is provided on the side near an exhaust tube 3, and moreover, a coil 8 to be applied with high-frequency electric power is provided on the side near a gas feed tube 2 respectively. Accordingly, even when batch processing is performed arranging wafers of a large number in a reaction tube, film thickness of the wafers arranged at any place in the reaction tube excluding the part being especially close to the exhaust tube are nearly unified, and moreover, in-plane distribution of film thickness is not generated at the respective wafers. |
