发明名称 METHOD OF PATTERNING
摘要 PURPOSE:To perform with ease the patterning of a evaporation-formed layer by a method wherein a second evaporation-formed film of Ni, Cr or the like is built at specific regions in a first film formed by evaporation on a substrate and the first evaporation-formed film comes off together with the second evaporation-formed film when the latter is peeled off. CONSTITUTION:A glass substrate 1 is heated, whereupon a first film, a transparent conductive film 3 for example, is formed by the evaporation method. The transparent conductive film 3 is formed of ITO, SnO2. A process follows wherein one or more of Ni, Cr, Ti, Mo, Pt is vaporized and, in the presence of a metal mask, selectively deposited at room temperatures on the transparent conductive film 3 for the formation of a metal film 4. When a piece of adhesive tape applied to the evaporation-formed film 4 is pulled, the portion of the transparent conductive film 3 positioned just below the metal film 4 peels off easily together with the metal film 4. The portion of the transparent conductive film 3 just below the metal film 4 stays when some pressure is applied downward across the metal film 4 by means of a pointed rod 5. This method applies to a film of SiO2 or Al deposited by evaporation on a metal substrate. This method is inferior to the photoetching method with regard to accuracy but this method accomplishes patterning by the evaporation method only.
申请公布号 JPS60142570(A) 申请公布日期 1985.07.27
申请号 JP19830250853 申请日期 1983.12.28
申请人 MATSUSHITA DENKI SANGYO KK 发明人 ISHIHARA SHINICHIROU
分类号 H01L21/302;H01L21/3065;H01L31/02 主分类号 H01L21/302
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