| 摘要 |
PURPOSE:To carry out high-concn. doping at low temps. by providing a combination of a lens for controlling the electric current and diameter of an ion beam, a mass separator for selecting ions, and a deflector to a titled ion source. CONSTITUTION:When an ion source 2 is electrically heated and a high voltage is impressed on a drawing electrode, an ion beam 6 of a eutectic metal is taken out. The electric current and diameter of the ion beam is controlled by an electrostatic lens 5, and only the desired ion is separated by a mass separator 5. The ion is further hit against a substrate 9 by a deflector 8 so that the ion may scan on the substrate 9. Accordingly, a high-purity dopant ion consisting only of the desired ion can be obtained, and the hundred-percent ionized particle can be doped in high concn. into a thin film growing on the substrate 9 by molecular beam epitaxial devices 10 and 11. In addition, the doping can be carried out without generating any segregation layers. |
