| 摘要 |
PURPOSE:To obtain the titled element of stable electric characteristics with a small required area by a method wherein a high-resistant polycrystalline Si element is vertically formed on the side wall of a deep hole of a semiconductor substrate via insulation film, and power is supplied to the high-resistant element from the substrate by contacting the element with the substrate at the bottom of the hole. CONSTITUTION:A P type well region 10 is formed on the surface of the N type Si substrate 9, and a high-concentration N type region 11 serving as the drain region is formed. The deep hole 12 reaching the substrate 9 is formed, and the insulation film 13 is formed on the side wall of the deep hole, which side wall is coated with high-resistant polycrystalline Si 14. The bottom of the Si 14 is in contact with the substrate 9, and therefore power can be supplied to the Si 14 from the substrate 9. Besides, an N type high-concentration region 15 formed above the Si 14 is connected to the drain region 11 with a wiring 16; thus, micro currents are supplied from the substrate 9 to the drain region 11, and the static action of a memory cell is enabled. |
