发明名称 |
IMPROVED SEMICONDUCTOR STRUCTURE, PHOTOSENSITIVE DEVICE INCLUDING SAME STRUCTURE, METHOD AND DEVICE FOR ACCUMULATINGSAME STRUCTURE |
摘要 |
A new class of synthesized semiconducting multiple layer materials, structures, and devices and apparatus and methods for synthesizing the structures. At least one layer (138a) of the multiple layer structure (138) is a disordered semiconductor material. Multiple layer structures can form one or more regions of improved photoresponsive and photovoltaic single and tandem cells, thin film transistors and thermoelectric devices. The multiple layer structures provide a means of electronically doping semiconductor device structures without adding substitutional dopant impurities. |
申请公布号 |
JPS60140718(A) |
申请公布日期 |
1985.07.25 |
申请号 |
JP19840256379 |
申请日期 |
1984.12.04 |
申请人 |
ENERGY CONVERSION DEVICES INC |
发明人 |
HERUMUUTO FURITSUCHIE;SUTANFUOODO AARU OBUSHINSUKII;DEEBITSUDO ADORAA |
分类号 |
H01L31/042;C23C14/56;C23C16/44;H01L21/205;H01L29/15;H01L29/49;H01L29/786;H01L31/04;H01L31/20 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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