| 摘要 |
PURPOSE:To allow formation of the garnet film for the magnetic bubble element by making the magnetic garnet film into the two-layer constitution of the first and the second layers, and by forming the magnetic layer inside the surface by implanting ions at the upper layer part of the second layer. CONSTITUTION:A garnet film is formed by a liquid phase epitaxial method. A magnetic layer inside the surface 3 is formed by executing double implanting of H2<+> of 1X10<16>ion/cm<2> with the accerelated voltage of 25kV and 4X10<16>ion/cm<2> with the accerelated voltage of 60kV for the garnet film. Thickness of the magnetic layer inside the surface 3 which is formed at the upper layer part of the garnet film which makes the garnet film for the ion implanting type magnetic bubble element is regulated to 0.2mum. The ratio between the magnetic layer inside the surface 3 and the thickness of the effective bubble layer when a bubble layer 1 of the first and a bubble layer 2 of the second are considered to be one bubble layer is regulated to 0.4-0.5. Thickness of the magnetic layer inside the surface 3 becomes smaller than that of the second layer 2. |
