| 摘要 |
PURPOSE:To prevent the short circuit of both electrodes when a metallic film is formed afterward by making a dielectric film cross over the surface to be treated of a semiconductor material and extending the dielectric film up to the surface of one electrode when the dielectric film is formed on the surface to be treated. CONSTITUTION:A jig for shaping a dielectric film on one projecting surface 4a of a semiconductor element 1 has two kinds of rectangular parallelopiped holders 9, 10 having different thickness. That is, the holder arranged brought into contact with the surface of a positive electrode 3 for the element 1 has the same thickness as the element 1, and the holder 10 disposed brought into contact with the surface of a negative electrode 2 for the element 1 has thickness smaller than the element 1. Consequently, when a dielectric is attached, not only dielectric film 12 is formed on the projecting surface 4a but also the dielectric film 12a creeps to the surface of the electrode 2 and is shaped. Accordingly, when a metallic film 13 is formed to a section corresponding to the surface to be treated of the film 12 in the post process, the electrodes 2 and 3 are not short-circuited through the film 13 even when the film 13 creeps to the electrode 2 side more or less. |
