| 摘要 |
PURPOSE:To reduce the size of an element by collecting the function of a device, in which a semiconductor laser diode and a modulation circuit are integrated in a monolithic manner, in the three terminal element. CONSTITUTION:Each layer of a p type GaAs buffer layer 2, a second clad layer 3, a GaAs active layer 4 and a clad layer 5 is laminated on a p type GaAs substrate 1, and an n type GaAs layer 7 brought into contact with a current injection region 6, a high-resistance GaAs layer 8 brought into contact with a current non-injection region and an n type GaAs layer 9 on the layer 8 are formed. A gate electrode 11 is shaped to the layer 7, and an ohmic electrode 12 is formed on the layer 9. An ohmic electrode 13 is further formed on the substrate 1. According to the constitution, laser oscillation can be turned ON-OFF easily by voltage applied to the electrode 11. The size of an element is reduced extremely because a current control section is unified with a laser oscillation section. |
