| 摘要 |
PURPOSE:To obtain Josephson IC's and the like with less failure and of high integration degree by the use of a thin film resistant material of high reliability and suitable for the increase in integration by a method wherein a part of the whole of a resistor is composed of a material having the composition of MoNx (0<x<=0.25). CONSTITUTION:A part or the whole of the resistor is composed of a material having the composition of MoNx (0<x<=0.25). For example, an SiO insulation film 2 is evaporated on an Si substrate 1, thus forming an MoN film 3; thereafter, a double-layer film of an Mo-N film and an MoN film containing N as the impurity. Next, the resistor 4 made of an Mo-N thin film containing N and a connection electrode 5 made of an MoN thin film are formed by processing by Ar ion beam etching. Then, the entire surface is coated with an SiO film, and an insulation film 6 is formed by the lift-off method. Further, an MoN film is formed and then processed into the lower electrode 7. An insulation film 8 having an aperture is provided, and a barrier layer 9 made of Mo oxide and the upper electrode wiring 10 made of an MoN film of given pattern are formed on the exposed lower electrode 7, leading to the production of a Josephson IC. |
