| 摘要 |
PURPOSE:To enable the simple preparation of an isolation layer for an active region by a method wherein a P type HgCdTe substrate is turned to an N type HgCdTe substrate by heating in an Hg atmosphere, and next an N<+> type layer isolating the active region is formed by the local heating with energy beams again in the Hg atmosphere. CONSTITUTION:The HgCdTe substrate has many Hg vacancies immediately after crystal growth and in therefore P type as a whole. The Hg vacancies working as acceptors are filled by the first heating to this substrate in an Hg vapor, and the donor concentration ND is set at approx. 10<15>. This substrate is placed in the Hg vapor, and the region for isolation layer formation to isolate the active region is locally subjected to the second heating with laser beams. When the substrate 2 is locally heated to approx. 400 deg.C, the Hg further thermally diffuses to the vacancies, and then the isolation layers 2a having an impurity concentration ND of approx. 10<17> is formed. Next, a CCD is produced by forming an SiO2 film 3 and gate electrodes 1a, 8a.... This manner simplifies the manufacturing process and improves the manufacturing yield. |
