发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable the formation of an electrode without the possibility of disconnection by a method wherein the edge of a groove dug in a substrate is enabled to be coated with an insulator. CONSTITUTION:A resist film 22, a metal film 23, and a resist film 24 are formed on the substrate 21, and the resist film 24 is patterned in accordance with picture elements and isolation regions. The metal film 23 is patterned by etching, and the resist film 22 is patterned by exposure and development; then, the resist film 24 is removed. When a groove 21a for insulator burial is formed by etching the substrate 21, the aperture end 22a of the resist film 22 overchanges like eaves. When the resist edge 22a are exposed and developed by oblique exposure with the metal film 23 as a mask, the edge 22a are mostly removed. On being filled with the coat of an insulator 25, the groove 21a is almost completely filled with the insulator 25 by its creeping also to the part where the edge 22 has been present. Then, the resist film 22, metal film 23, and insulator 25 are removed. This manner enables the almost flat formation of an insulation film 26 and an electrode 27 thereon, causing no possibility of disconnection of the electrode 27.
申请公布号 JPS60140839(A) 申请公布日期 1985.07.25
申请号 JP19830250061 申请日期 1983.12.28
申请人 FUJITSU KK 发明人 YAMAMOTO KOUSAKU;MAEKAWA TOORU
分类号 H01L21/76;H01L27/146 主分类号 H01L21/76
代理机构 代理人
主权项
地址