| 摘要 |
PURPOSE:To obtain the complementary field effect semiconductor device of high integration degree and high speed by a method wherein high melting point metal layers are formed on polycrystalline Si's for a gate electrode and a wiring, and thereafter a source-drain and a diffused layer are formed by heat treatment at the same time with a metal silicide layer. CONSTITUTION:A well 2, a field region 4, and a gate oxide film 5 are formed in a semiconductor substrate 1, and the oxide film 5 is partly etched; then, a polycrystalline Si 6 is grown over the entire surface. Next, a thin thermal oxide film 7 is formed on its surface, and a thin nitride film 8 is grown thereon. Then, after the oxide film 5 is removed by patterning the Si 6, oxide film 7, and nitride film 8, a thermal oxide film 9 is formed on the diffused layer and on the side surface of the polycrystalline Si. An N type injected region 10 and a P type injected region 11 are formed. The Si 6 is exposed by removal of the nitride film 8, and a high melting point metal 12 is formed. A metal silicide layer 13 is formed by heat treatment. Further, the source and drain 14, 15 and the diffused layers 16 and 17 are formed by this heat treatment. An insulation film 18 is grown by etch-removal of the unreacted metal 12, and wiring 19 is carried out. This manner enables the realization of short channel transistors. |
