发明名称 FIELD EFFECT TYPE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To facilitate the change in the input operating voltage by a method wherein the titled device is composed of n-pices of drive MOS transistors and m- pieces of load transistors whose mutual conductances are both in a fixed range, and (n+m) pieces of connection pads and connection wires. CONSTITUTION:This device is composed of n-pieces of drive MOS transistors Q11-Q1n provided with drain terminals D11-D1n discretely and having uniform mutual conductances in a fixed range, m-pieces of load MOS transistors Q21- Q2m provided with source terminals S11-S1m discretely and having uniform mutual conductances in a fixed range, (n+m) pieces of connection pads D21-D2n and S21-S2m, and a connection line CL. Thereby, when the input-output characteristics as shown by A is desired to obtain, MOS transistors Q11, Q21 and Q22 can be used by connecting D11 to D21 and, S11 to S21, S12 to S22; when that shown by B is desired to obtain, connection of D11 to D21, D12 to D22, S11 to S21, and S12 to S22 is sufficient. In such a manner, the input operating voltage can be easily changed for every client.
申请公布号 JPS60140857(A) 申请公布日期 1985.07.25
申请号 JP19830247018 申请日期 1983.12.28
申请人 NIPPON DENKI KK 发明人 BETSUSHIYO MIKIO
分类号 H01L21/8234;H01L21/82;H01L27/088;H01L27/118;H03K19/0948 主分类号 H01L21/8234
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