| 摘要 |
PURPOSE:To obtain a memory device, a necessary area thereof is reduced, by using a negative resistance element consisting of a metal-metal oxide contactor as a memory cell. CONSTITUTION:A negative resistance element E composed of a metallic layer and an oxide layer and a negative resistor R are connected in series, and a source for a transistor T for transfer is connected at a node 31 between the element E and resistor R. A drain for the transistor T is connected to a bit line B and a gate to a word line W respectively, and another ends of the resitor R and the transistor T are each connected to a power supply 32 and grounding potential, thus manufacturing a memory device. For constitute the memory device, a polycrystalline Si layer 42, one part thereof functions as the gate G and the other thereof the word line W, is formed on an Si substrate 41 through a gate insulating film, and source and drain regions 43 and 44 are diffused and shaped in the substrate 41 on both sides of the layer 42 while using the layer 42 as a mask, thus manufacturing the trasistor T. The whole surface is coated with a thick insulating film 45, windows are bored and a second polycrystalline Si layer 46 is formd, and an impurity is controlled in one part of the layer 46 to shape the resistor R. The layer 46 is coated with an oxide film 47, and a Ti layer 48 and an oxide film 49 are applied on the film 47. |
