发明名称 MANUFACTURE OF SEMICONDUCTOR LASER
摘要 PURPOSE:To keep the polarity of a protection layer stable by inhibiting the evaporation of Bi doped in an active protection layer by a method wherein the surface of a burial crystal substrate is coated with an vapor containing Bi in case of growing a buried layer on the substrate. CONSTITUTION:The burial crystal substrate 1 is set up in a carbon boat 11. A boat slider 12 is provided with a chamber 13, which is then filled with the vapor of Bi or a Bi-containing substance. For this purpose, a shelf 14 is formed in the chamber 13, and Bi or Bi-containing substance 15 is placed thereon. With an increase in temperature in the chamber 13, the vapor containing Bi is evaporated. A cap 16 is put over the chamber so that this vapor does not escape, and this situation is kept to immediately before the growth of a burial layer.
申请公布号 JPS60140888(A) 申请公布日期 1985.07.25
申请号 JP19830250081 申请日期 1983.12.28
申请人 FUJITSU KK 发明人 NISHIJIMA YOSHITO;FUKUDA HIROKAZU;EBE KOUJI
分类号 H01L21/368;H01S5/00;H01S5/028 主分类号 H01L21/368
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