| 摘要 |
PURPOSE:To improve the mass-productivity and the high frequency characteristic by providing a P-channel and an N-channel field effect transistor (TR) having respectively the 1st and 2nd impedance at each source side and a means for amplifying inversely an output voltage using the 1st and 2nd impedance element as loads and applying the voltage to a gate of the P-channel and N-channel field effect TR respectively. CONSTITUTION:The drains of the P-channel MOSTRM21 to the source of which an impedance element comprising a resistor R1 and a capacitor C6 is connected and of the N-channel MOSTRM22 to the source of which an impedance element comprising a resistor R2 and a capacitor C7 is connected are connected to constitute an inverse amplifier. When an output DC level is biased to the power supply level, the DC level of a connecting point each between the P-channel MOSTRM21 and between the N-channel MOSTRM22 and a resistor R2 is biased to a GND level, the output of the bias circuit is biased conversely to the power supply level and the output DC level goes conversely to the GND level. Since the bias voltage by the said feedback loop is added to the bias voltage, the output DC level of the amplifier circuit is set near the middle level between the power supply and the GND levels at all times.
|
