| 摘要 |
PURPOSE:To obtain a ROM, access time thereof is very short and the degree of integration thereof is high, by forming reverse condution type bit lines to the surface layer section of one conductive type semiconductor substrate through diffusion, forming a gate between these bit lines through a thin insulating film, coating the whole surface with an insulating film and boring an opening, and applying a word line to the gate while being extended on the insulating film. CONSTITUTION:Reverse conduction type bit lines BL are formed to the surface layer section of one conduction type semiconductor substrate S through diffusion, and a gate G is shaped through a thin insulating film OX while being held by these bit lines, thus constituting a MOS capacitance MC by these bit lines, insulating film and gate. An insulating film is applied on the whole surface, a through-hole C is bored made to correspond to the gate G, and a word line WL is applied to the gate G while being extended on the film. According to such constitution, pulse voltage is applied only to the word line WL selected by an address recorder, and a circuit ST initially setting the potential of the bit lines before starting access and a sense amplifier SA are connected to the bit lines BL. |
