| 摘要 |
PURPOSE:To obtain a film, in which there are few pin holes and which has small density at a capture level, by executing glow discharge decomposition through introduction of a mixed gas containing carbon tetrafluoride into a reaction chamber and glow discharge through introduction of a gas, in which hydrogen is added to argon, mounting a substrate, introducing a reaction gas and executing glow discharge decomposition. CONSTITUTION:A mixed gas containing CF4 is introduced into a reaction chamber 1 for an amorphous-silicon growth device, glow discharge decomposition is executed, and te inside of the reaction chamber 1 is dry-etched. Ar+H2 gas is introduced into the reaction chamber 1, and F, C, O adhering on the inside of the chamber 1 are driven out by Ar and removed through glow discharge. Substrates 3 are mounted into the reaction chamber 1, a reaction gas is introduced, and amorphous-silicon films are formed on the substrates 3 through glow discharge decomposition. |
