| 摘要 |
PURPOSE:To enable patterning with high accuracy and without residues only by an anisotropic means by flat formation of the second poly Si layer by a method wherein stepwise differences formed in a multilayer poly Si structure are flattened by being filled by selective epitaxity. CONSTITUTION:A nitride film 8, a poly Si layer 3, and an oxide film 6 are formed on an Si substrate 1; only the film 8 is removed by selective etching, and an epitaxial layer 9 is formed by selective epitaxity into a flat structure. Next, a gate oxide film 10 is formed with the gas of oxygen and HCl, the second poly Si layer 6 being formed thereon by CVD and the like, and a resist pattern being then formed; then, the layer 6 is patterned by reactive ion etching. Because of the flat structure, this patterning is carried out without residues even by anisotropic etching, and has a high accuracy. |
