| 摘要 |
PURPOSE:To obtain the titled device having an ''INA system'' electrode where the generation of poly-flower phenomenon is prevented by a method wherein a spacer layer made of an insulation film is interposed between a polycrystalline Si layer and an electrode made of a metallic layer. CONSTITUTION:After formation of an electrode contact window 2' in a field insulation film 2, an impurity of desired conductivity type is introduced to an Si active region 1 and heat-treated, thus forming a high impurity concentration region 1'. A polycrystalline Si layer 3 and an Si dioxide layer 5 are formed over the entire surface of a substrate by using the CVD method, and the Si dioxide layer 5 is removed only from the region corresponding to the window 2'. An aluminum layer 4 is evaporated over the entire surface of the substrate and then patterned into a desired flat shape, the layers 5 and 3 are etch-removed by using the same mask. At the electrode lead-out section thus formed, the aluminum electrode 4 is isolated from the Si layer 3 by the spacer layer 5 made of an insulation film; therefore, the generation of poly-flower phenomenon is surely prevented. |
