| 摘要 |
PURPOSE:To obtain an epitaxial film having preferable temperature characteristic in a melting solution for growing garnet (YSmLuBiCa)3(FeGe)5O12 for a magnetic bubble containing mainly PbO and Bi2O3 or (YSmLuBiCa)3(FeSi)5O12 by selecting the total molar ratio of Fe2O3 and rare earth element oxide Re2O3, and containing the prescribed molar ratio of B2O3 with respect to PbO. CONSTITUTION:In a melting solution of garnet film for a magnetic buble containing mainly PbO and Bi2O3, the molar ratio of Fe2O3 and the total of Re2O3 is 19 or higher, and further B2O3/PbO>=1/20 is selected. When an epitaxial film is formed from this solution, a magnetic film having (YSmLuBiCa)2(FeGe)5O12 or (SmLuBiCa)3(FeSi)5O12 in which the temperature coefficient of a bubble collapse magnetic field for controlling the temperature properties of a bubble memory cell is approached to the temperature coefficient -2.0%/ deg.C of the magnetic field of Ba ferrite magnet for bias magnet is obtained, and the performance of the bubble memory cell can be remarkably improved.
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