| 摘要 |
PURPOSE:To prevent the generation of contact failure by a method wherein the thickness of an insulation layer formed on a lift-off film and on a contact region is increased by reducing the temperature of forming the lift-off film formed on a phospho-silicate glass layer. CONSTITUTION:As the lift-off film 40, an aluminum or poly Si film is formed on the top of the PSG film 18. At this time, the temperature is set at 500-600 deg.C. Next, the lift-off film 40, source regions 13, 16, and contact regions 41-44 are patterned at the same time. Then, the sputtering of the insulation layer 45 is performed on the contact regions 41-44 and on the lift-off film 40. The thickness of the insulation layer 45 is selected at 1,000-6,000Angstrom . When the film 40 is etched with an etchant, the insulation film 45 is left only on the contact regions 41-44. The insulation layer 45 is removed from the contact regions 41-44 by melting the PSG film 18, and metal wirings of aluminum and the like are patterned, resulting in the completion of a CMOS transistor. This manner enables the prevention of the increase in resistance of the P type source and drain regions and the P-channel. |
