| 摘要 |
PURPOSE:To prevent the malfunction due to an impact ion current by a method wherein a semiconductor substrate is provided with a memory element section, a peripheral circuit element section that drives it and is for input and output, a region having the reverse conductivity type to the substrate and a specific depth and surrounding the memory element section, and the like. CONSTITUTION:The titled device is constructed by comprising the memory element section M-CELL provided on the P type Si substrate 1, the peripheral circuit element section including a MIS transistor QD, etc. that drives it and is for input and output, and the region 2 having the reverse conductivity type to the Si substrate 1, i.e., N type and a depth of 2-10mum and surrounding the M-CELL. Such a structure enables carriers generating for impact ionization to be captured to the P-N junction made by the region 2 and the substrate 1 during diffusion through the substrate. Then, the malfunction of the memory element section can be eliminated by preventing the carriers from reaching this section. |
