发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable the formation of a uniform Al layer and a P<+> layer without cohesion or cracks by a method wherein one main surface of a P type Si substrate is coated with a paste of substance mainly made of scalelike Al powder, which is then calcined. CONSTITUTION:In the case of forming the same conductivity type impurity layer 3 and an electrode 5 on one main surface of the P type Si substrate 1, a paste of substance mainly made of scalelike Al powder is applied and then calcined. For example, a material with an N<+> layer formed on the front of the substrate 1 by ion implanted is used as a junction-forming Si substrate for a solar cell. A substance produced by adding a viscous liquid, prepared by dissolution of ethylcellulose in alpha-terpineol, to the scalelike Al and by knealing it is used for the Al paste. This Al paste is screen-printed on the back of said Si substrate 1 and treated by drying, and then photo receiving plane electrodes 4 are formed after calcination in the atmosphere of nitrogen gas at 750 deg.C.
申请公布号 JPS60140883(A) 申请公布日期 1985.07.25
申请号 JP19830246952 申请日期 1983.12.28
申请人 HITACHI SEISAKUSHO KK 发明人 MATSUYAMA HARUHIKO;NAKATANI MITSUO;OKUNAKA MASAAKI;YOKONO ATARU;ISOGAI TOKIO;SAITOU TADASHI;MATSUKUMA KUNIHIRO;MIDORIKAWA SUMIYUKI;SUZUKI SATORU
分类号 H01L31/04;H01L21/28;H01L21/283;H01L21/288;H01L31/0224 主分类号 H01L31/04
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