| 摘要 |
PURPOSE:To improve ohmic contact by a method wherein an N<+> type amorphous Si film is produced on an active layer amorphous Si film without exposing this film to the air. CONSTITUTION:A gate insulation film 3, an active layer a-Si film 4, and a channel-protecting insulation film 5 are successively produced on a gate electrode 2 formed on a glass substrate 1 in a reaction furnace, and the pattern of the channel part of a resist film 6 is succeedingly formed. Thereafter, the SiO2 film 5 is dry-etched with the resist film patterned in the same reaction furnace as a mask. Next, an N<+> a-Si film 8 is successively produced while the inside of the same furnace is kept at vacuum. It is done by doping an a-Si film to N<+> type with phosphine and monosilane gas. Thereafter, an electrode material is evaporated over the entire surface, and source-drain electrodes 9 are formed by etching performed outside the furnace. Since the a-Si and N<+> a-Si films are successively produced thereby without breaking vacuum, hold-accumulated type leakage currents do not flow, and off-currents can be reduced. |
