发明名称 |
Boron nitride containing titanium nitride, method of producing the same and composite ceramics produced therefrom. |
摘要 |
<p>Boron nitride containing titanium nitride in an amount of 0.05 to 10 wt.% which is produced at a relatively low temperature, utilizing a chemical vapor deposition technique. In the deposition process, boron, titanium and nitrogen source gases are introduced into an evacuated reactor together with a carrier and/or diluent gas and contacted with a heated substrate previously mounted in the reactor, whereby boron nitride with titanium nitride is deposited onto the substrate. The deposit thus obtained has a high density, a significantly improved heat-shielding ability, a high degree of anisotropy with respect to thermal diffusivity and a high chemical stability. By using such anisotropic boron nitride with BN ceramics, very useful BN type composite ceramics can be produced.</p> |
申请公布号 |
EP0149044(A1) |
申请公布日期 |
1985.07.24 |
申请号 |
EP19840113503 |
申请日期 |
1984.11.08 |
申请人 |
RESEARCH DEVELOPMENT CORPORATION OF JAPAN;NAKAE, HIROYUKI;MATSUDA, TOSHITSUGU;UNO, NAOKI;MATSUNAMI, YUKIO;HIRAI, TOSHIO;MASUMOTO, TSUYOSHI |
发明人 |
NAKAE, HIROYUKI;MATSUDA, TOSHITSUGU;UNO, NAOKI FURUKAWA DENKO KIBOGAOKA SHATAKU;MATSUNAMI, YUKIO;HIRAI, TOSHIO;MASUMOTO, TSUYOSHI |
分类号 |
B32B18/00;C03C17/22;C04B35/583;C23C16/34;(IPC1-7):C01B21/064;C04B35/58 |
主分类号 |
B32B18/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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