| 发明名称 |
Method for making electrical contact to semiconductor devices |
| 摘要 |
<p>An electrical contact is made by allowing the end of a wire 3 to which a contact material 7 has been added to touch the desired region of the semiconductor 9 whilst maintaining the contact material at a temperature near to its melting point. A ball 5 may be produced on the end of the wire prior to the addition of the contact material. <IMAGE></p> |
| 申请公布号 |
GB2151529(A) |
申请公布日期 |
1985.07.24 |
| 申请号 |
GB19840031490 |
申请日期 |
1984.12.13 |
| 申请人 |
* AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
DAVID VERN * LANG;SAMSON KHAIM * MILSHTEIN;JOHN MICHAEL * PARSEY |
| 分类号 |
B23K20/00;H01L21/60;(IPC1-7):B23K1/12 |
主分类号 |
B23K20/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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